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We report on amplified spontaneous broadband terahertz emission in 1–7.6 THz range at 100 K via current injection in a distributed-feedback dual-gate graphene-channel field effect transistor (DFB-DG GFET). The device exhibited a nonlinear threshold-like behavior with respect to the current-injection level. A precise DFB cavity design is expected to transcend the observed spontaneous broadband emission...
A distributed-feedback (DFB) dual-gate graphene-channel field-effect transistor was fabricated as a current-injection terahertz laser. A single mode emission at 5.2 THz was observed at 100K beyond the threshold carrier injection level. Spectral narrowing with increasing the carrier injection around the threshold was also observed. The result is still preliminary level but the linewidth fairly agrees...
We report on photonic frequency double-mixing conversion utilizing a graphene-channel FET (G-FET). Optoelectronic properties of graphene are exploited to perform single-chip photonic double-mixing functionality, which is greatly advantageous in future broadband technological conversion between optical fiber and sub-terahertz wireless communications. A 1-GHz modulation signal on a 125-GHz carrier is...
Recent advances in emission and detection of terahertz radiation using two-dimensional (2D) electron systems in III–V semiconductors and graphene are described. First the 2D plasmon resonance is presented to demonstrate intense broadband terahertz emission and detection from InGaP/InGaAs/GaAs and InAlAs/InGaAs/InP material systems. The device structure is based on a high-electron mobility transistor...
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