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The surface temperature of cone-shaped patterned sapphire substrate (PSS) in GaN epitaxial growth by MOCVD and its relation to forced convection conditions and substrate surface topography were systematically investigated. Calculations using finite element method (FEM) exhibited that increase of substrate thickness would reduce surface temperature variation on PSS in typical growth condition. A hydrodynamics...
200 nm thick InxAl1-xN epilayers around lattice-matched to GaN were grown on GaN templates by MOCVD. The elastic strain, surface morphology and crystalline quality of the InxAl1-xN were evaluated by high resolution X-ray diffraction (HRXRD) measurements, scanning electron microscopy (SEM) images and Rutherford backscattering spectroscopy (RBS) analyses. The strain effect, as while as the influences...
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