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With continuous scaling of Complementary Metal Oxide Semicondutor (CMOS) device dimensions, traditional inter-level dielectrics have be replaced by low-k materials, because of the advantages of ultra low-k material such as lower parasitic capacitance, lower cross talk effects, and lower RC delay. The new material in integrated circuits (IC) makes physical failure analysis (PFA) more challenging. This...
Reliability tests, such as High-Temperature Operating Life (HTOL), Hot Carrier Injection (HCI), Time Dependent Dielectric Breakdown (TDDB), etc., is required for the lifetime prediction of an integrated circuit (IC) product. Transmission Electron Microscopy (TEM) analysis is required to provide insights to the defect mechanisms, induced in the scaled gate oxide, by the above reliability tests. In...
The performance of PCA and FDA based fault detection and diagnosis procedures could deteriorate with the violation of the normality assumptions made during conventional approaches. The consequence is a reduction in accuracy of the models and efficiency of the methods, which results in an increase of misdetection and misclassification rate. A robust method is proposed to deal with the normality violation,...
Large blackouts are typically caused by cascading failure propagating through a power system by means of a variety of processes. Because of the wide range of time scales, multiple interacting processes, and the huge number of possible interactions, the simulation and analysis of cascading blackouts is extremely complicated. This paper defines cascading failure for blackouts and gives an initial review...
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