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Abstract.A method for quantitative analysis of Ti-Si-Ge/Si-Ge/Si structures with submicron thick layers by energy dispersive spectroscopy (EDS) in transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) was developed. Quantitation of the results of both AES and EDS techniques was performed on the basis of a single reference specimen for the Ti-Si-Ge system comprising a uniform...
Abstract.The combination of energy dispersive spectroscopy (EDS) and electron backscatter diffraction (EBSD) techniques in scanning electron microscope was employed to characterize the reacted interface between Ti matrix and AlN particles. Due to the high localization of EDS and EBSD, representative measurements of chemical composition and reliable determination of the crystal structure were possible...
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