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Fully-porous pn junctions were fabricated, by anodization of p/n substrates, and electrically tested. Process parameters, current density and illumination, were chosen to take into account the different morphological and mechanical characteristics of porous silicon layers resulting from anodization of the p- and n-type silicon. I–V curves were measured as a function of the aging time. Interestingly,...
Two different architectures of integrated thermal flow meters based on a differential temperature configuration are investigated. A standard structure made up of a heater placed between two temperature probes has been compared to a recently proposed variant equipped with a double heater. The latter has shown a different dependence of the response on gas type when driven in a closed loop fashion. The...
Thermal gas flow meters based on two different architectures have been fabricated using two commercial CMOS processes. Low cost postprocessing methods, adapted to the features of modern industrial processes, are discussed. Three inexpensive packaging strategies are proposed and their effects on the device response have been compared. The sensitivity dependence on gas type has been investigated for...
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