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In this work, strained large area graphene is used in the channel of Graphene-FET (G-FET) to realize the G-FET in logic application. The strain dependent quantum confinement effect in terms of quantum capacitance is investigated and a drain current model is proposed under tight binding approximation. The influence of strain on the performance of G-FET as a function of gate voltage, channel length...
A quasi-ballistic transport model for graphene FET (GFET) is analyzed in this work. The effect of top and back gate oxide layers of the model with different dielectrics are considered to analyze the device performance. A comparative study considering the equivalent oxide thickness (EOT) for the different oxide layers is done using the proposed model. It is found by the simulation results that the...
Here we report the impact of source/drain contact resistance on the dynamic characteristics of large area Graphene Field Effect Transistor (GFET). Although silicon has been the most widely used semiconductor in the channel of MOSFETs, it is approaching to its physical limits. On the other hand, graphene has been deeply studied as a potential alternative; however its zero band gap forbids the applicability...
Effect of source/drain contact resistance on the DC characteristics of large area Graphene Field Effect Transistor (GFET) is reported here. As graphene has been identified as a potential candidate for replacing silicon based devices, their performance has been thoroughly investigated. In practical devices, the contact resistance at the interface of channel and Source/Drain (S/D) contact is inevitable;...
A simple analytical approach is presented to investigate the energy band structure of graphene under the application of shear strain. The strain-induced deformation in the unit cell in terms of the angle between two unit vectors is taken into consideration in the framework of nearest neighbor tight binding model. The proposed approach is applied to evaluate the energy band gap in graphene structure...
We have proposed a simple analytical approach to study energy band structure in strained graphene. In our study, the strain-induced deformation of primitive unit cell is included in tight binding model. The unit cell deformation is determined in terms of the angle between two primitive unit vectors. The proposed method is applied to evaluate the band gap under the application of biaxial symmetrical...
Graphene is an excellent material for flexible electronics due to its high carrier transport properties. We report a flexible graphene field effect transistor on polyimide substrate using graphene oxide as top-gate dielectric. Good current saturation and peak hole and electron mobilities of 496 cm2/(V.s) and 164 cm2/(V.s) are observed, respectively, for the proposed intrinsic RF device. A maximum...
A study is performed on extrinsic performance of graphene field effect transistor on a flexible polyimide substrate with graphene oxide gate dielectric. Using self-consistent calculation, it is shown that quantum capacitance retains a nonzero minimum at the dirac point. Excellent electron and hole mobilities and maximum on current of 137 μA are obtained for this flexible device. RF analysis has shown...
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