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The growth of monoclinic phase‐pure gallium oxide (β‐Ga2O3) layers by metal–organic chemical vapor deposition on c‐plane sapphire and aluminum nitride (AlN) templates using silicon‐oxygen bonding (SiOx) as a phase stabilizer is reported. The β‐Ga2O3 layers are grown using triethylgallium, oxygen, and silane for gallium, oxygen, and silicon precursors, respectively, at 700 °C, with and without silane...
Graphene is an excellent material for flexible electronics due to its high carrier transport properties. We report a flexible graphene field effect transistor on polyimide substrate using graphene oxide as top-gate dielectric. Good current saturation and peak hole and electron mobilities of 496 cm2/(V.s) and 164 cm2/(V.s) are observed, respectively, for the proposed intrinsic RF device. A maximum...
A study is performed on extrinsic performance of graphene field effect transistor on a flexible polyimide substrate with graphene oxide gate dielectric. Using self-consistent calculation, it is shown that quantum capacitance retains a nonzero minimum at the dirac point. Excellent electron and hole mobilities and maximum on current of 137 μA are obtained for this flexible device. RF analysis has shown...
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