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A numerical approach is presented to study the crystallographic orientation-dependent performance of 445nm InGaN/GaN quantum well (QW) Blue Laser by solving a six-band k.p Hamiltonian for wurtzite crystal using finite difference method. Euler's rotation technique is used to modify the wave vector and Hamiltonian matrix in conventional (0001) crystal orientation. It is found that there is a substantial...
The models for investigating the phase diagram of InGaN thin films have been anticipated by considering the effects of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. Total Gibb's free energy varies with Indium composition and thickness of the epitaxial thin film. The calculated results indicate that over critical thickness, energy of the films increases...
This paper investigates the effects of interlayers to reduce the threading dislocation density at the top surface of the epilayer in step-graded InGaN heteroepitaxy. The reaction kinetic coefficients are considered as key parameter in the dislocation reduction and calculated analytically. The reaction model has been solved numerically with different number of interlayer. A significant improvement...
It is imperative to determine the dependence of the quality and characteristics of the epitaxial film on different growth parameters. A mathematical model has been developed showing the effect of different growth parameters e.g. temperature, TMI and TEG flow rate, molar ratio on epitaxial film. This model is considered for InGaN film on GaN template with an Indium mole fraction up to 0.4 by Metal...
This paper presents the evidence of strain relaxation and improved quality of MOVPE InxGa1−xN using step graded interlayers. A compositionally step-graded InxGa1−xN is grown on GaN template by controlling temperature from 750° to 900° C with optimum TMI/(TMI+TEG) molar ratio. Using two interlayers the lattice mismatch of 0.33, 0.31 and 0.59 between the successive layers are measured from reciprocal...
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