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A numerical approach is presented to study the crystallographic orientation-dependent performance of 445nm InGaN/GaN quantum well (QW) Blue Laser by solving a six-band k.p Hamiltonian for wurtzite crystal using finite difference method. Euler's rotation technique is used to modify the wave vector and Hamiltonian matrix in conventional (0001) crystal orientation. It is found that there is a substantial...
A numerical approach is presented to calculate crystal orientation-dependent effective mass of heavy hole, light hole and spin-orbit split-off hole of III–V semiconductors (GaAs, InAs, InP, GaSb, and InSb etc.) at Gamma-point by envelope approximation using k.p method. Unitary transformation is used to modify the wave vector and eight-band k.p Hamiltonian is applied in conventional (100) crystal orientation...
Here, we report the effect of channel thickness on the performance of a InGaSb-on-insulator FET with 15-nm gate length. The ballistic current-voltage characteristic is computed by nonequilibrium Green’s function method using thickness-dependent effective mass, which is extracted from tight binding dispersion. Simulation result reveals that the threshold voltage and subthreshold slope decrease with...
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