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Silicon nitride (SiNx) thin film layers were deposited on Cu/Ta/SiO2/Si multilayer structures by Plasma Enhanced Chemical Vapor Deposition at the temperature 285°C. The influence of post deposition thermal annealing treatments on the micro-structural, compositional and thermal stability study of SiNx/Cu/Ta/SiO2/Si multilayer structure was studied and compared with unpassivated, Cu/Ta/SiO2/Si multilayer...