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This paper presents a compact transistor model for circuit design in a flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) technology. The presented model is technology specific and builds upon the Verilog-A Rensselaer Polytechnic Institute amorphous silicon TFT (RPI-aTFT) model. On the basis of extensive device characterization, we introduce appropriate new equations...
This paper presents two high-gain amplifiers fabricated in a flexible self-aligned amorphous indium gallium zinc oxide thin-film transistor (TFT) technology. One common-source amplifier relies on positive feedback to provide a voltage gain of 17 dB, and a bandwidth of 79 kHz from a dc power of only 0.76 mW. One cascode amplifier provides a voltage gain of 25 dB, and a bandwidth of 220 kHz from a dc...
To our knowledge, this paper presents the first high-gain amplifiers fabricated in flexible self-aligned amorphous indium gallium zinc oxide (a-IGZO) thin-film-transistor (TFT) technology. For the common source amplifier applying positive feedback a voltage gain of 17 dB, a bandwidth of 79 kHz and a DC power of only 0.76 mW were measured. For the cascode amplifier a voltage gain of 25 dB voltage gain,...
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