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In this brief, we have investigated the time-dependent performance degradation of digital benchmark circuits due to channel hot carrier (CHC) stress in junction-and doping-free devices. For device–circuit interaction, we have developed the lookup table-based Verilog-A models of both devices for circuit simulations. At device level, the drain current of conventional n-type junctionless FET (JLFET)...
Silicon-based Static Random Access Memory (SRAM) has not been keeping pace with technology trends due to the limited improvements in power, performance and density. This paper explores graphene based SRAM as a potential replacement of silicon SRAM for future digital electronics. Due to its higher current on-to-off ratio, the graphene nanoribbon field effect transistor (GNRFET) has been considered...
This paper presents non-EDA based design simulation using Simscape for graphene based nanoelectronic systems. The objective of this paper is to explore ultra-fast design for analog devices using substitutes to conventional but time intensive EDA simulations such as SPICE. A GFET behavioral model is presented where the model is based on the drift-diffusion conduction mechanism of the dual-gate device...
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