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In this work the idea of graded band gap design in intrinsic-layer is simulated and studied numerically. We study our device model (p-GaN/ i-Ga1−xInxN /n-InN) by using AMPS-1D. The device performance is calculated by transport equations. Effect of series resistance is presented. It has been found that the use of the graded gap in intrinsic region can improve the performance of the GaN/InN solar cell.
InxGa1−xN alloys feature a bandgap ranging from 0.7eV to 3.4eV, covering almost the entire solar spectrum. To optimize the efficiency and the best parameters of solar cells, numerical simulations of InxGa1−xN single junction. The simulation modeling is important and indispensable for designing and fabricating InxGa1−xN single junction.
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