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This paper deals with EMC testing studies conducted on Sensor devices — accelerometer/inertial sensors. Immunity and Emission performances are carried out to ensure the compliance with market needs. We describe the steps with improvement of PCB layout leading to high immunity level of the system. The paper demonstrates how the PCB layout can contribute to the EMC performance of an application based...
The paper presents a detailed study of the dynamic response of an Automatic Gain Control loop (AGC loop) exposed to pulsed radiofrequency interference. It is shown that the most significant effect is an increase of the RF output level of the AGC that is strongly dependent on the pulse repetition frequency, the effect being less pronounced as the repetition frequency increases. It is demonstrated that...
Near-field injection at silicon level is a promising method for various areas such as the analysis of radiated immunity to electromagnetic disturbances. Up to now, the research has been mainly focused at PCB level due to the resolution of the near-field probe. This paper presents first investigations of near-field injection on a Safe System Basis Chip at die level. The investigations are focused on...
Discrete low-frequency bipolar transistors are subjected to two types of interferences: CW (continuous wave) and pulsed modulated sine signal. In the goal to study the electromagnetic immunity of integrated circuits, devices are biased at low current level. Specific interference frequency bands induce changes in the transistor output voltage, even with frequency values out of band of operation of...
In this paper we present an electromagnetic study of the picosatellite Robusta. The first step of this study consists in measuring the different high frequency signals emitted during normal operation by the power board and radiocommunication board. Both of them were amongst the most susceptible of all boards to radiate a high frequency field. The most radiating zones are thus determined. In a second...
This paper concerns bipolar transistors subject to a double aggression: dose irradiation and high-frequency interference. The electromagnetic interference is injected in a contactless way in the near-field zone around the device. Parameters of the interference are power and frequency, the latter largely out of band of operation of the transistors. The output voltage of the transistor exhibits changes,...
Space or military electronic components are subject to both electromagnetic fields and total ionizing dose. This paper deals with the modification in the susceptibility to 100 MHz – 1.5 GHz signals of a discrete low frequency transistor subsequently to total ionizing dose deposition. The electromagnetic susceptibility is investigated on both non-irradiated and irradiated transistors mounted in common...
Space or military electronic components are subject to both electromagnetic susceptibility and ionizing dose. Synergy effects should therefore be considered at early stages of component design. This paper deals with the susceptibility to high frequency signals in the 600 MHz–1 GHz frequency range of electronic voltage comparators subject to ionizing dose. The comparators come into two batches: non-irradiated...
The paper presented here is part of the electromagnetic susceptibility studies conducted on active circuits. An electromagnetic interference (EMI) is injected on an integrated voltage controlled oscillator (VCO). We describe the different effects observed on its operation mode when the circuit is subject to an EMI or high frequency signal. Three operating modes are observed. Some of them are confronted...
Space or military electronic devices are subject to both electromagnetic fields and total ionizing dose. The reliability of a discrete low frequency transistor is addressed by means of electromagnetic susceptibility measurements after total ionizing dose. The bipolar transistors under test are subject to high frequency interferences in the near-field zone with 100MHz–1.5GHz signals. For comparison,...
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