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AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were fabricated with ZnO gate insulator and chlorine surface treatment. It is revealed that the chlorine treatment reduced the gate lag phenomenon and enhanced the device performance. The gate leakage current was also reduced about one order of magnitude in comparison to the conventional one. The chlorine-treated MOS-HEMTs...
A photoelectrochemical oxidation method was used to directly grow oxide film on the Al0.15Ga0.85N as the insulation film of the AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The gate leakage current at reverse bias of VGS= -7V is WnA. Even the reverse bias is VGS=-60V, the leakage current is only 102 nA. An unity gain cutoff frequency (fT) of 5.6 GHz and a maximum...
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