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In this work, a new methodology to extract bulk (µbulk) and accumulation (µacc) mobility in symmetric Double Gate (DG) Junctionless transistor is presented. The method is based on the modification of McLarty function to distinguish and extract mobility values and consistent with the current flow mechanisms in JL MOSFET. Results indicate higher values of accumulation mobility as compared to bulk mobility...
In this work, we report on the extraction of low field mobility values (μ0) for Double Gate (DG) Junctionless (JL) transistor. The methodology is based on the determination of flatband voltage through McLarty function method and modification of the same in the accumulation region for determining the accumulation mobility values. Results show that accumulation mobility values are higher than bulk mobility...
In this paper radiation performance of 4T, 6T, 7T, 8T and 10T MOSFET based-SRAMs are studied using TCAD simulations. The minimum dose (critical dose) required to flip contents of the cell are extracted, compared and analyzed. The simulation results show that 10T SRAM shows better radiation performance whereas 4T-SRAM shows worst radiation performance.
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