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This paper presents hybrid L- and P-stable implicit numerical methods for solving differential equations of electronic circuits and systems. Hybrid methods are developed on the basis of two known subclasses of implicit Runge-Kutta methods commonly referred to as Rado IIA and Lobatto IIIA methods. Comparative analysis of the known methods and the proposed hybrid methods demonstrates a high accuracy...
The models of solid-state sources of chaotic oscillations (chaos generators) of various complexity order are considered in the present paper. The investigated chaos generators are intended for transmitting devices of wireless personal communication networks. A technique for testing of numerical simulation methods of chaos generators is proposed. This technique allows to choose the most accurate numerical...
Various types of hybrid frequency synthesizers based on the combined use of direct digital synthesis and phase-locked loop are considered in the present paper. Numerical evaluations of the response speed and the stability of hybrid frequency synthesizers, both under standard conditions, and under large disturbances, are obtained. The techniques of hybrid frequency synthesizers' parameters optimization...
This paper presents an original approach to estimate the accuracy of numerical algorithms of transient analysis for four test problems. The tests are presented as mathematical models and electronic circuits too. Test problems and methods of estimation of numerical analysis algorithms' accuracy proposed in the present paper can be used in circuit simulators and in computer mathematics programs to test...
The methods of parameter extraction of models of electronic components have been considered. By the example of parameter identification of SPICE-models of a semiconductor diode it was shown that it is impossible to obtain even a rough estimate of the models parameters while using standard optimization techniques based on the calculation of derivatives of the objective function. Application of the...
A new MOSFET model for liquid-helium temperatures is introduced by the replacement of certain parameters of the original physical compact model by the Padé functions of a gate voltage. The relative root-mean-square error of I-V curves modeling is reduced at least threefold with the error of the output conductance and transconductance modeling reduced twofold.
The temperature dependencies of the basic parameters of MOSFETs in a temperature range 20 – 300 K are measured. The universal formal four-parametric model, which allows to approximate all experimental temperature dependencies with the relative error less than 1 % is proposed. The hybrid analytical model efficiency for approximation of volt-ampere characteristics of MOSFETs is proved.
In radio communication application the important specification for a local oscillator is oscillation amplitude. This paper describes the shortcomings of trapezoid rule for the numerical solution of differential equation of a sine oscillator. Explicit expression for the error of simulated oscillation amplitude has been derived.
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