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The mechanism behind the threshold voltage VT variability difference between n- and p-type field-effect transistors (NFETs and PFETs, respectively) is investigated from the viewpoint of the channel dopant profile. First, the effect of the depth profile is investigated by comparing the VT variability among FETs with various depth channel profiles. It is clarified that the VT variability of NFETs is...
By comparing electrical data of a wide variety of MOSFETs using a special normalization method, it was revealed that pFET random fluctuations can be mostly explained by RDF, while some additional fluctuation mechanism contributes to nFETs. It is suspected that this difference is caused by the different behavior of the channel impurity species.
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