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We have developed a monolithic isolator that provides an isolation voltage of 4 kV and a signal transmission rate of 100 Mbps. Two circuit areas are isolated using 34 trenches on a bonded SOI with 3-mum-thick buried oxide. The inequality in the voltages applied to the trenches is reduced using polysilicon resistors parallel to the trenches, which increases the isolation voltage from 2.4 to 4.0 kV...
This paper describes the key technology to realize highly reliable flash memory cells, which have submicron Shallow Trench Isolation (STI). It has been clarified for the first time that the Stress-Induced Leakage Current (SILC) of the tunnel oxide on the rounded corners of the STI edges is about one order smaller than SILC of the flat oxide. Moreover, data retention characteristics of the flash memory...
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