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Although it has been demonstrated that the SiGe HBTs can achieve faster unloaded circuit speed at cryogenic temperature than at room temperature, modelling of the SiGe HBTs at low temperature has been limited. It is known that the standard SPICE models of bipolar transistor are effective and guarantee the valid results only up to a temperature of minus 100°C. Therefore, in this paper an accurate and...
In this report the prospects of new element baseline of subTHz and THz bands making on the basis of nonlinear parametric zonal systems working on current ultra-harmonics in the highest zones of electromagnetic oscillations instability are observed. Estimations of their possibilities at implementation of these systems on the base of nanolevel composite medium are made. Various versions of this problem...
The article considers multichannel integrated circuits (ICs) MH2XA010-02/03, which are realized on the radiation-hardened structured array (SA) MH2XA010 and designed for analog signal processing of optoelectronic sensors. It gives the electric circuits of ICs, the description of their functionality features and the measurement results of their main parameters.
The article gives the circuit design results of the of radia-tion-hardened charge-sensitive amplifier (CSA) MH2XA010-04, intended for the capacitance sensor signal processing. The main equations for optimal design of CSA are given, taking into account a new circuit (2016) of structured array MH2XA010. The variants of construction of multichannel CSAs for the tasks of tool engineering based on the...
The article considers the advanced two-stage architectures of the differential op-amps and differential difference operational amplifiers, realized on the base BiJFet of array chips AGAMC1.3, AGAMC2.1 (OJSC “Integral”, Minsk). The suggested circuits provide the higher voltage gain (more than 90…100 dB), and also the low offset voltage (less than 100 µV) over the temperature range −80°C – +80°C, the...
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