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The threshold switching characteristics of amorphous NbOx thin films is investigated with particular emphasis on temperature dependence of the switching characteristics. Threshold switching in this material is believed to result from a thermally-induced insulator-metal-transition (IMT) induced along a filamentary path by local Joule heating. Increasing the operating temperature is shown to lead to...
A physical electro-thermal model that describes bipolar resistance switching in Nb2O5-based memory devices is presented based on the finite element method. The switching mechanism is assumed to be controlled by the diffusion and drift of oxygen vacancies in conductive filaments (CFs). The proposed model correctly describes the microscopic morphology of the CF during the gradual reset transition, which...
The effect of Nb as an oxygen exchange layer in HfO2 based resistive random access memory (ReRAM) is investigated. The advantages of Nb are demonstrated by comparing the performance of Pt/HfO2/Pt and Pt/HfO2/Nb ReRAM devices. The former are shown to exhibit only unipolar resistive switching, while the latter exhibit a range of switching modes including stable bipolar operation.
We consider discrete-time distributed estimation on a directed graph with switching topologies. Motivated by a recent PI consensus filter, we modify the protocol and remove the constraint on bi-directional information exchange and gain conditions that require global topological information. The protocol is then extended to switching topologies. Convergence results for time-invariant inputs under both...
This paper is designed to solve the problem of state feedback control for a class of switched linear system with time-delay independent. The aim is that the system is closed-loop stable under control with arbitrary switching rules and all the eigenvalues of each sub-system locate in the area we assigned. First, LMI method is presented to solve the problem of the stability of linear time-delay system...
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