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This paper presents a fully integrated dc-dc converter with on-chip double galvanic isolation. The converter exploits only two dice both fabricated in a 0.35-μm BCD technology with a thick-oxide back-end for 5-kV galvanic isolation. It uses a novel architecture to transmit power across two isolation barriers, which are performed by integrated capacitors and transformers. LC coupling inherently enables...
This work presents a review of integrated transformers for galvanic isolation with particular focus on their modelling in power transfer systems. A comparison between transformer-coupled oscillator topologies is carried out, highlighting the main differences in the realization of the isolation transformers. A novel lumped geometrically scalable model of three-windings transformer for current-reuse...
This brief presents a fully integrated dc–dc converter consisting of only two CMOS chips, which are a power oscillator with an integrated transformer and a full-bridge rectifier. A thick inter-metal oxide layer guarantees a galvanic isolation rating as high as 5 kV. A current-reuse hybrid-coupled oscillator is proposed, which is based on a three-winding tapped isolation transformer and improves both...
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