Serwis Infona wykorzystuje pliki cookies (ciasteczka). Są to wartości tekstowe, zapamiętywane przez przeglądarkę na urządzeniu użytkownika. Nasz serwis ma dostęp do tych wartości oraz wykorzystuje je do zapamiętania danych dotyczących użytkownika, takich jak np. ustawienia (typu widok ekranu, wybór języka interfejsu), zapamiętanie zalogowania. Korzystanie z serwisu Infona oznacza zgodę na zapis informacji i ich wykorzystanie dla celów korzytania z serwisu. Więcej informacji można znaleźć w Polityce prywatności oraz Regulaminie serwisu. Zamknięcie tego okienka potwierdza zapoznanie się z informacją o plikach cookies, akceptację polityki prywatności i regulaminu oraz sposobu wykorzystywania plików cookies w serwisie. Możesz zmienić ustawienia obsługi cookies w swojej przeglądarce.
This paper presents a 300 MHz to 3 GHz Low-Noise Amplifier (LNA) with high HP3 and one of the smallest silicon area we could find. It is based on a single amplifier, where it is systematically optimized to achieve better results than more complex noise canceling topologies, thus, saving area and power consumption. A CMOS inverter with resistive feedback where transistors are self-biased in strong...
This paper presents a CMOS wideband LNA topology operating under a 450 mV voltage supply in the analog TV white spaces frequency band from 54 MHz to 862 MHz. It could be used in a wideband RFID or energy harvesting communication network applications. The proposed circuit is self-biased, uses no inductors and it has a cascaded amplifier in the noise canceling branch for a better trade-off of noise...
The design of an ultra-low voltage CMOS wideband LNA topology operating under a 0.6 V power supply with high gain and high IP2 is presented in this paper. The circuit performance is targeted towards use in direct conversion receivers, where a high IP2 is required. The LNA operates in sub-1 GHz applications reaching frequencies as low as 50 MHz, as it is required by IEEE 802.22 standard. The topology...
This work presents a 2-decades wideband (15.5 MHz–1.55 GHz) low-noise amplifier (LNA) circuit. As its wideband range extends from HF to UHF, it includes, among others, the ISM bands (27.12 MHz, 40.7MHz, 434.79 MHz, 928 MHz), the GSM850 and GSM900 bands, and IEEE 802.22 WRAN bands (54 MHz–862 MHz). The proposed circuit operates also as a balun (single-ended input — differencial output) and its layout...
A 50 MHz–1 GHz low-noise amplifier circuit with high linearity for IEEE 802.22 wireless regional area network is presented. It was implemented without any inductor and offers a differential output for balun use. Noise canceling and linearity boosting techniques were combined to improve the amplifier performance in such a way that they can be separately optimized. Linearity was improved using...
This work presents a novel Switched-capacitor Bandgap Voltage Reference (SCBGR) circuit that dispenses entirely the use of resistors. The vEB negative drift and the thermal voltage (VT) positive drift voltages are both generated by the same PNP vertical bipolar transistor, avoiding diode mismatch problems. The current sources that are used to generate different junction current densities are averaged...
This work presents a novel Switched-capacitor Bandgap Reference circuit using no resistors at all. The negative drift VEB and the positive drift VT voltages are generated by the same PNP bipolar transistor. A switched-capacitor circuit stores and processes these voltages, generating the bandgap reference voltage in only 4 clock phases. The proposed topology was simulated in CMOS 130nm process, presenting...
Podaj zakres dat dla filtrowania wyświetlonych wyników. Możesz podać datę początkową, końcową lub obie daty. Daty możesz wpisać ręcznie lub wybrać za pomocą kalendarza.