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In this work, an improved version of the basic structure of a compact MOSFET model and the respective parameters extraction methodology are proposed. The aim of this approach is to increase accuracy in hand calculations for analog circuit design without significantly increasing its complexity. The influences of both inversion level and channel length are considered in the modeling of a few features...
In this work, the methodology for the extraction of threshold voltage and specific current of a compact MOSFET model is extended in order to incorporate second order effects such as mobility degradation and threshold voltage dependence on channel length. As the original method, the proposed one is based on transconductance-to-current ratio characteristics and gives rise to a more accurate semi-empirical...
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