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In the paper field-effect transistors with porous silicon layer in the gate area are described. Such structures can be used for vapor detection as well as in liquids. It was shown that depending on formation conditions porous silicon layer formed by different etching methods can be selective between substances.
In the paper optical properties and surface morphology of thin porous silicon layers on insulator substrate are investigated. It is shown that porous silicon can be formed from microcrystalline silicon layers and its morphology depends on type and orientation of insulator substrate. It was noticed that porous silicon transmission spectra notably differ from thin silicon spectra. Luminescence can be...
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