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A Barium-rich interface process provides SÌO2/SÌC interface conditions suitable for obtaining SiC field-effect (FE) channel mobility twice that of a nitric oxide (NO) passivation anneal. The temperature dependence of the field-effect mobility indicates clear differences in their interface properties. Secondary-ion mass spectrometry (SSIMS) indicates that Ba remains predominantly at the SiO2/SiC interface,...
Since Cree, Inc.'s 2nd generation 4H-SiC MOSFETs were commercially released with a specific on-resistance (RON, SP) of 5 mΩ·cm2 for a 1200 V-rating in early 2013, we have further optimized the device design and fabrication processes as well as greatly expanded the voltage ratings from 900 V up to 15 kV for a much wider range of high-power, high-frequency, and high-voltage energy-conversion and transmission...
A dipole moment model explaining Vt tuning in HfSiON gated nFETs is proposed and its impact on performance and reliability is presented. La, Sc, Er, and Sr dopants are utilized due to their differing electronegativities and ionic radii. These dopants tune Vt in the range of 250-600 mV. Vt tuning is found to be proportional to the net dipole moment associated with the Hf-O and rare earth (RE)-O bonds...
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