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In this study, the piezoresistive pressure sensor of Si membrane was fabricated using the Si wet etching with a tetramethyl ammonium hydroxide (TMAH). Anisotropic Si etching properties of TMAH solution and sensing characteristics of the etched Si membrane were investigated. The addition of ammonium persulfate (AP) to the TMAH solution improved the flatness of etched Si surface and the undercutting...
In this study, the anisotropic etching properties of single crystal silicon were examined using a tetramethyl ammonium hydroxide (TMAH). The variations in the Si etching rate and surface morphology at different etching temperatures and TMAH concentrations were evaluated. The effects of different additives were also examined. As the THAM concentration (10–25 wt. %) decreased, the etching rate increased...
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