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Quantum definition based threshold voltage calculation of Gate-All-Around Junction Less Nanowire Transistor has been presented in this work. Employment of this approach has not yet been achieved on GAA-JLNT even though similar determination was previously established for TG FinFETs and GAA-MOSFETs in recent literature. The self-consistent solver, which takes wave function penetration and other quantum...
This work presents the evaluation, as well as comparison of Capacitance-Voltage (C-V) characteristic and threshold voltage variation of two different structures of Junction Less Nanowire Transistor (JLNT), Double Gate (DG-JLNT) and Rectangular Gate (RG-JLNT). The self-consistent solver, which takes wave function penetration and other quantum mechanical (QM) effects into account, has been utilized...
This work investigates quantum ballistic transport in ultra-small junctionless semiconducting nanowire transistors, within the framework of self-consistent Schrodinger-Poisson problem. A sub-band decomposition approach has been taken to make the problem numerically tractable. Finally simulated transport characteristics for small diameter (d≤5 nm) n-Si-channel cylindrical gate-all-around junctionless...
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