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Silicon Double Gate nMOSFETs are simulated using a deterministic Boltzmann solver coupled with a 1D Schrödinger and 2D Poisson Equation. Subthreshold characteristics and high drain bias conditions can be well simulated by the solver stabilized by the H-transformation and the maximum entropy dissipation scheme.
We have developed a Boltzmann equation solver for two-dimensional (2D) semiconductor devices based on the spherical harmonics expansion and the maximum entropy dissipation scheme for stabilization. The large system of equations is partitioned according to the order of the spherical harmonics and solved by a memory efficient blockwise Gauss-Seidel method. Results are presented for a 2D NPN Si bipolar...
In this paper, we present a measurement based on biased data retention to determine the direction of charge loss. Top oxide and bottom oxide thickness can be optimized to meet long term reliability goal. A split gate nanocrystal nonvolatile memory with large program window, while demonstrating excellent data retention and program disturb characteristics is also presented.
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