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For the first time created a Verilog-model ALU microprocessor 6502 company MOS Technology (USA) based MPGA 5503HM5 using CAD VLSI Kovcheg 3.02. It carried out a complete ALU design cycle, including the simulation of the formation of a truth table and topology. It is shown that the library 5503 is functionally complete and supports the effective development of all the constituent elements of the ALU...
Experiments confirmed that the process of plasma chemical etching of silicon in chlorine containing plasma is well compatible with a photoresist mask. Dependences of rate of plasma chemical etching of silicon on value of flows of oxygen and freon, anode current, sample location in the reactor, physical characteristics of silicon sample, etching time are studied. The plasma chemical etching of silicon...
The main results of plasma etching of silicon in CCl2F2/O2 in the quartz reactor with a teflon covering are considered. The consistent model of plasmochemical etching of silicon in CCl2F2/O2 plasma in the conditions of the active delivery chemically the active particles at the expense of teflon etching is constructed. Depth etching of silicon to 180 microns in 30 minutes is carried out.
The basic results of plasma etching of silicon in CCl2F2/O2 in quartz reactor with teflon polimer by a covering are considered. The uninconsistent model of plasma chemical of etching (PCE) of silicon in plasma CCl2F2/O2 in conditions of active delivery chemically active particles (CAP) is constructed at the expense of etching teflon polimer.
The analysis of prospects of development nanoelectronics and silicon nanotechnology is carried out. The information on a condition of works on manufacturing integrated microcircuits on technological norms 32, 45, 51, 55 and 60 nm is resulted. The basic results of plasma etching of silicon in CCl2F2/O2 in quartz reactor with teflon polymer by a covering are considered. The model of plasma chemical...
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