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For the first step of evaluation of the effect of difference frequency distortion in intermodulation distortion and memory effects, we have derived distortion characteristics at the difference frequency as well as third-order intermodulation. In practical calculation of Volterra kernel in frequency domain, we used measured I-V characteristics, and S-parameters in both fundamental (around 2 GHz) and...
In this paper, we reveal an activation energy of a frequency-dependent drain conductance in AlGaN/GaN HEMT. Firstly, using two-port vector network characteristics at a low frequency less than MHz, it is confirmed that frequency dependence of a drain conductance (Gd) results in peculiar behavior in S22 of the AlGaN/GaN HEMT. In order to obtain the activation energy of the process of the frequency response...
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