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This paper presents the design and performance of two millimeter-wave LNAs using 35nm InP HEMT device technology. First, a single-ended 3-stage LNA, operating over the 81-86 GHz band, is reported with a noise figure (NF) of 1.6-1.9 dB and a gain of 28 ±1 dB. This is the lowest reported noise figure for LNAs at this frequency. Secondly, a balanced LNA, operating over the 56- 110 GHz band, is reported...
This paper reports a new family of GaAs MMICs for E-band communications applications. Both single-ended and balanced versions are reported with minimum output power levels of 26 dBm and 28 dBm respectively for both the 71–76 GHz and the 81–86 GHz. bands. This is 3 dB (2 times) higher than the current state-of-the-art. The single-ended version of the low-band (71–76 GHz) MMIC demonstrated an output...
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