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Minnick counter is a special kind of electronic circuit that is employed to determine the number of ones in a binary input sequence. Here we have proposed a circuit which can determine the number of ones in a binary sequence. If we look close to the circuit then we may find that this circuit can also be used as a Full Adder circuit with a little alteration. The 3 bit Minnick Counter circuit can act...
A new technique of Ripple carry adder using majority gate based CMOS output wired logic is implemented. The ripple carry adder consists of four Full adder blocks. The carry from each stage is fed to the next stage as carry input. The Sum and carry outputs are obtained using output wired CMOS logic based majority gate. The number of transistors used in the proposed circuit design is less as compared...
In this paper, we have designed a β driven 1-bit full-adder circuit. Circuits based on threshold elements have raised extensive interest in recent years. It uses a CMOS(complementary metal oxide semiconductor field effect transistor) pair with variable β. Transformation of a regular analytic representation of the threshold function in a ratio form is the concept behind the design of the β driven circuit...
In this paper a new implementation technique of 1-bit full adder using Negative Differential Resistance (NDR) circuit composed of N-MOSFETs is presented. The design is based on Monostable to Bistable transition logic element (MOBILE) theory. In this circuit peak current level of the load and driver NDR is modulated by controlling the gate voltage of n-MOS device connected in parallel to the NDR element...
In this paper, we investigate different devices that can perform negative differential resistance property and the applications of an NDR device. An evolution from a conventional SET (single electron transistor) based NDR passing through various intermediate technologies such as RTDs, Lambda Diodes, HBTs (Hetero-junction Bipolar Transistor) towards CMOS based NDR has been discussed. Combining the...
The DC analysis of a Metal Oxide Semiconductor Field Effect Transistor based negative differential resistor (NDR) is investigated. V-I characteristic of NDR is obtained by adjusting the parameters of NMOS transistors. Here the NDR circuit exhibits lambda type V-I characteristic. The circuit is easy to fabricate as all the components used here are NMOS. To study the characteristic curve of the NDR...
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