The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper the influence of momentum relaxation time on electron drift mobility in ternary alloys in case of potential alloy scattering is examined. It is necessary for simulating the dynamic properties of devices and appliances based on solid solutions of binary semiconductor compounds. Momentum relaxation time is obtained in the adopted method by averaging electron scattering rate by its distribution...
In this paper an analytical expression for the intervalley relaxation time is obtained by averaging intervalley scattering rate by electron distribution function. This equation is valid for different relations between the phonon energy and intervalley distances, making it applicable for ternary alloys, in which the position of valleys depends on stoichiometric composition of the alloy.
A mathematical modeling and simulation of the electron gas heating in multi-valley semiconductors of the AIHBV type are presented in the paper. The expressions for the rate of the energy relaxation on intervalley transitions can be used in design processes. Proposed equations differ from the usual expressions by additional terms, one of which depends on intervalley distance.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.