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A novel fabrication process for the integration of Field Effect Transistors in electrostatically actuated bulk acoustic resonators is demonstrated. ALD-deposited HfO2 is used as a high-k dielectric for the FET and as an etch-stop layer during the release of the resonator structure as well, enabling the creation of sub-100 nm air-gap resonators with FET amplification enhancement.
High frequency wine-glass mode bulk MEMS resonators actuated by means of capacitive transduction have been fabricated by using solid-gaps based on polyvinylidenefluoride-trifluoroethylene (PVDF-TrFE). The fabrication process flow of patterned PVDF-TrFE gaps applied in RF MEMS is presented for the first time. Measurements of the polarization of the material and the frequency and voltage dependence...
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