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The effects of dielectric slots on Cu/Low-k interconnects reliability were studied. Dielectric slots were proven to be effective in suppressing stress-induced void failure but their impact on EM reliability was found to be minimal. Physical failure analysis and finite element simulations were used to explain the possible mechanisms associated to the different effects of dielectric slots on Cu/low-k...
Through-silicon interconnection technology is considered to be a critical and enabling technology for 3-D stacking of electronic and electro-mechanical systems, which is believed to be a solution to the performance bottleneck associated with traditional and inherently long 2-D chip-to-chip interconnections. An obvious advantage in this architecture is that it leads to space saving for portable and...
Integration of copper (Cu) and low-k dielectrics has posed significant challenges for device reliability and packaging. For faster and successful semiconductor product introduction, early implementation of simulation model for physics and mechanical studies, and the subsequent design for manufacturability (DFM) are important considerations for device reliability and packaging communities. In this...
The integration of copper (Cu) and low-k dielectrics has posed challenges for stress migration (SM) reliability. Besides process tuning, design for manufacturability (DFM) approach is proposed to suppress stress-induced void failures. In this paper, a three-dimensional (3D) finite element analysis (FEA) simulation model was used to identify the main mechanisms of several key processes and design approaches...
Novel dielectric slots were incorporated into advanced Cu interconnects using a damascene process without additional masking steps. The dielectric slots were found to be effective in suppressing stress-induced void failure. Together with physical analysis results, the possible mechanisms that improve the stress migration reliability of advanced Cu interconnects are discussed
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