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This paper represents a layout solution to reduce the on-chip couplings in between two BALUNs, which is implemented by UMC 28iim CMOS process. In advanced CMOS technology and circuit application applied for higher frequency, couplings are always an issue to be solved, which are mostly coming through substrate, magnetic fields or electric fields. A floating ring is in use to block the magnetic couplings...
TSV (Thru-Silicon-Via) for 3D packaging technique is a further passive component, for connecting two dies by stacking. RF characteristics of TSV with modeling up to 50GHz are presented in this paper, where a L-2L de-embedding method (double delay) is in use, which is the first applied for TSV on-wafer measurement. Furthermore, a new T-model is proposed for modeling a single TSV of 28nm CMOS process.
On-wafer de-embedding method has been proposed for different method up to millimeter-wave (mm-wave) frequency range. An extended de-embedding method for on wafer devices up to 65GHz is proposed. Using Vertical connection of L-2L (VL2L) is presented in this paper, with a calibrated loss tangent value in mm-wave. It shows significant good and accurate results for on-wafer modeling up to 65GHz. VL2L...
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