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Although the primary goal of treatment of type II odontoid fracture is bony union, some advocate continued nonsurgical management of minimally symptomatic older patients who have fibrous union or minimal fracture motion. The risk of this strategy is unknown. We reviewed our long-term outcomes after dens nonunion to define the natural history of Type II odontoid fractures in elderly patients managed...
Accurate heart rate detection is important in healthcare and exercise monitoring. Recently, heart rate monitoring using a smartphone has been highlighted due to its convenience and accuracy. In this paper, we hypothesize that our smartphone-based heart rate detection algorithm reliably detects heart rate based on fingertip image changes. Here, we have used successive video camera fingertip images...
Smartphone signals corrupted by motion and noise artifacts (MNAs) are often misclassified into atrial fibrillation (AF) by our previous smartphone AF detection application [1]. We developed an MNA-tolerant AF detection algorithm for smartphones, which first detects MNAs in the smartphone signals, removes them, and finally detects AF from the MNA-free smartphone signals. To detect MNAs, we used time...
High‐κ gate‐all‐around structure counters the Short Channel Effect (SCEs) mostly providing excellent off‐state performance, whereas high mobility III–V channel ensures better on‐state performance, rendering III–V nanowire GAAFET a potential candidate for replacing the current FinFETs in microchips. In this paper, a 2D simulator for the III–V GAAFET based on self‐consistent solution of Schrodinger–Poisson...
Since the fabrication of first III–V Gate-All-Around (GAA) MOSFET it is under extensive research, as it is one of the potential candidates to replace the state of art tri-gate FinFETs, to continue progressive scaling. In this work, transport characterization of experimentally demonstrated gate-all-around (GAA) InxGa1−xAs nanowire MOSFET in near-ballistic regime is performed using 3D self-consistent...
Gate-all-around structure with III-V channel material shows improved channel performance with high carrier mobility and less short channel effect and therefore is being studied rigorously for next generation transistors. We propose an analytical model to calculate gate capacitance and drain current of gate-all-around (GAA) nanowire MOSFET, a prospective device to replace the state-of-art FinFET in...
This paper presents the characterization of interface trap charge for 30 nm In0.53Ga0.47As channel Gate-all-around field effect transistor (GAAFET) using ALD Al203 as the oxide. The interface trap charge density (Dit) is extracted from CV model through self consistent iterations. The CV model is formulated by self consistent Schrödinger-Poisson solver. Wave function penetration effect has been considered...
This paper presents quantum definition based threshold voltage calculation of Gate-All-Around InGaAs nanowire transistor. Though similar determination was previously established for TG FinFETs in recent literature, application of this method on Gate-All-Around Nanowire Transistor is yet to be done. A self-consistent solver, which takes wave function penetration and other quantum mechanical effects...
This paper presents the ballisitic current limit and gate leakage due to direct tunneling of a Rectangular Gate-all-around InGaAs Nanowire Transistor and their variation with fin width, oxide thickness and In compostion in InGaAs. Ballistic current is found to be higher (1.5×1011 Am−2) for about 20nm fin width, sub-5nm oxide thickness and In-rich InGaAs channel. On the other hand, gate leakage is...
The 3-D poisson's equation with eight boundary conditions is solved analytically and an analytical model of potential profile and threshold voltage for rectangular gate-all-around III–V nanowire MOSFET device is developed with quantum correction. Dependence of threshold voltage on channel width, oxide thickness, gate-length, doping and channel material composition are determined from the developed...
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