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An analytical model for high voltage Thin-film Silicon-On-Insulator (TSOI) lateral devices is proposed in this paper. A new Reduced SURface Field (RESURF) criterion is obtained for TSOI lateral devices with a lateral linear doping in the drift region. The optimum drift doping profile for TSOI lateral devices can be obtained from the new RESURF criterion. The analytical results are in good agreement...
A new SOI LIGBT structure with a combination of uniform and variation in lateral doping profiles on partial membrane (UVLD PM SOI LIGBT) is proposed in this paper. Its silicon substrate under the drift region is selectively etched to remove the charge beneath the buried oxide so that the potential lines can release below the membrane, resulting in an enhanced breakdown voltage. Moreover, combining...
An improved double-recessed 4H-SiC MESFETs structure with recessed source/drain drift region was proposed. The recessed source/drain drift region is to reduce channel thickness between gate and drain as well as eliminate gate depletion layer extension to source/drain. The recessed source/drain drift region of the proposed structure can be realized with the formation of double-recessed gate region...
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