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Transient thermal characterization by thermal imaging in our earlier work demonstrated its ability to extract key information about the thermal response of transistors under operating conditions. We investigate a non-equilibrium response to a short time pulse for very high frequency devices, e.g. hetero-junction bipolar transistors (HBTs). Characterizing high speed thermal signals from devices with...
To achieve the required performance with high speed switching transistors, the gate feature length in communication devices is as small as a few tens of nanometers in multi finger configurations and transistors are arrayed in a Monolithic Microwave Integrated Circuit (MMIC). The technology therefore, makes thermal characterization more and more difficult. We employ a transient thermal imaging technique...
We present the thermoreflectance thermal imaging method and the equipment for transient thermal characterization with a time resolution of 100 ns and a sub-micron spatial resolution for high speed RF and communication devices. Thermoreflectance is a non-invasive and non-contact imaging method. Our unique approach interlocks the timing of image acquisition and the device biasing such that a high speed...
Hetero junction Bipolar Transistor (HBT) and High Electron Mobility Transistor (HEMT) arrays are commonly used for RF and microwave high speed and high power applications. Thermoreflectance imaging can be utilized to understand the transient thermal characteristics of a GaN HEMT device. A time resolution of 50 ns clearly shows the thermal location-dependent time constants for the device, which could...
Packaging of optoelectronic devices becomes more and more challenging due to higher heat generation per unit volume. We experimentally investigated the packaging thermal resistance for a semiconductor laser device and compared results for two material alternatives for the electrical passivation layer. We used the time-resolved thermoreflectance technique to obtain the time response for the thermal...
Electrostatic discharge (ESD) protection devices are critical in preventing static charge from damaging integrated circuit (IC) chips. Due to the high speed nature of the ESD event, however, thermal characteristics have been hard to capture or characterize. We investigated the use of the transient thermoreflectance imaging method to characterize the temperature distribution in a time series of thermal...
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