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Graphene is a material with great promise for several applications within electronics. However, using graphene in any such application requires its integration in a stack of thin layers of materials. The ideal structure of graphene has a fully saturated surface without any binding sites for chemisorption of growth species, making film growth on graphene highly challenging. Herein, an attempt to deposit...
Femtosecond (fs) laser pulse sources have become increasingly popular in the last decade as a result of their practical features, such as insensitivity to environmental variations, versatile designs, high power outputs. However, much of the progress is with non-integrated specialty fibers, which involve some compromise on these practical features. Monolithic fiber chirped pulse amplification (CPA)...
The paper consider oxygen contamination of HCPA ALD grown GaN films under an air conditioning and during different time duration. High resolution XPS analysis of HCPA ALD grown GaN films after diluted 1:10 HF(41 %) : H2O and undiluted HF (41 %) influence on oxygen impurities was investigated. Lesser oxygen impurities have been observed. Better resistivity to oxygen atoms of GaN thin films after diluted...
The efficiency of light emitting diode (LED) depends on: (1) the choice of technological regimes; (2) temperature properties of the materials used to form heterostructures; (3) the concentration of defects in the grown films. Based on studies of standard dynamic displacements of atoms in the crystal lattice of GaN and InxGa1−xN compared with AlGaInP solid solutions, we aimed to prove application of...
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