The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
For efficient design of digital circuits operating under wide range of voltage voltages, RTN model incorporating the dependencies of both the gate area and supply voltage are required. In this paper, we characterize the delay distributions due to RTN under different supply voltages. The delay distributions are then converted to threshold voltage distributions by statistical analysis. Measurement results...
This paper proposes a statistical modeling methodology of RTN (Random Telegraph Noise) gate size dependency utilizing skewed ring oscillator (RO) structures. An iterative characterization flow is developed to estimate RTN induced threshold distribution of each gate sizes of pMOSFET and nMOSFET independently. The skewed RO based test structure was fabricated in a 65 nm SOTB (Silicon On Thin Body) process...
This paper describes several sensor and circuit solutions for organic flexible electronic devices. Organic field effect transistors (OFET) enable low‐cost, high‐flexibility and large‐area which can be utilized to implement smart sensors. These sensors can be in contact with the physical objects of any shape. Furthermore, as the devices are very light and flexible, they can even be placed in contact...
We propose a characterization and modeling methodology for Random Telegraph Noise (RTN) induced ΔVth variation based on gate delay variation measurement. We characterize the total amount of ΔVth and model its scaling effect. A topology-reconfigurable ring oscillator (RO) is used to obtain gate delay variations between inverter stages. The devices under test are operated at near- or sub-threshold region...
Aggressive technology scaling and strong demand for lowering supply voltage impose a serious challenge in achieving robust and energy-efficient circuit operation. This paper first overviews on device-circuit interactions to enable cross-layer resiliency, and energy optimization. We show that the ability to monitor and control device and circuit characteristics not only increase energy-efficiency by...
We propose an area-efficient and low-cost extraction methodology of Vth variation which utilizes the exponential relationship of gate delay to Vth variation. The exponential relationship is achieved by operating the DUT in the weak inversion region. Utilizing a previously proposed pass-gate based topology-reconfigurable ring oscillator, the weak inversion operation of a specific gate is achieved while...
Aggressive technology scaling and strong demand for lowering supply voltage impose a serious challenge in achieving robust and energy-efficient circuit operation. This paper first overviews circuit techniques for variability resilience including onchip circuits for performance and variability monitoring. We then focus on on-chip delay cells for transistor performance estimation and homogeneous and...
To measure target MOSFET variation, specific monitor schemes are required. With device scaling, developing each monitor scheme is costly. This paper proposes a universal delay monitor cell which enables measurements of various types of variations with single monitor scheme. The monitor cell is reconfigurable and standard cell compatible; thus it can be used in the conventional place and route flow...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.