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Among the various sub-60 mV/decade transistors proposed to reduce the supply voltage (and thereby, power dissipation) of an integrated circuit, a Landau switch achieves this goal by amplifying the gate voltage by replacing the gate dielectric (DE) with a ferroelectric (FE) that exhibits negative capacitance. The subthreshold swing (S) and power dissipation are indeed reduced, but one wonders if switching...
A one-transistor tunnel SRAM cell is proposed and analyzed. The new cell uses the bistability of a tunnel diode pair to latch the body voltage of a MOSFET which then shifts the threshold voltage and enables sensing of the state by measurement of the MOS transistor current. Band-to-band tunneling is used to write the cell.
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