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Currently available materials for III–V multijunction solar cells lattice matched to GaAs covering the spectral range from 1.65 to 1.82 eV are composed of either immiscible quaternary alloys or contain aluminum. We report the fabrication of a novel aluminum-free In$_x$ Ga$_{1-x}$As$_{1-z}$P$_z$ /Ga$_{1-y}$In $_y$P (x > y ) strain-balanced multiple quantum-well (SBMQW) p-i-n solar cell structure...
The development of high-performance high band gap tunnel junctions is critical for producing efficient multijunction photovoltaic cells that can operate at high solar concentrations. The n-InGaP/GaAs/p-AlGaAs TJ has been demonstrated to produce peak tunneling currents (Jpk) above 1000 A/cm2 with minimal absorption losses due to the use of thin (≤50 Å) GaAs layer. We will report on the growth and device...
Strain balanced multiple quantum wells (SBMQWs) lattice matched to GaAs consisting of InGaAsP wells balanced with InGaP barriers have been used to extend the absorption of In0.49Ga0.51P subcells to longer wavelengths for use in five and six junction photovoltaic devices. Thin layers of InGaAsP quantum wells that absorb beyond 760 nm, have been grown with compositions within the miscibility gap of...
Quantum well structures hold tremendous potential in taking next step beyond current photovoltaic structures in achieving solar conversion efficiencies beyond 50%. In this paper we investigate p-i-n InGaP solar cells incorporating InGaAsP/InGaP strain balanced multiple quantum wells (SBMQWs) to tune the absorption threshold beyond the In0.49Ga0.51P cut-off (∼ 1.85 eV). The effects of quantum well...
The efficient utilization of traveling wave metalinsulator-metal (MIM) tunneling structures promotes the use of rectennas in energy harvesting applications. These MIM structures can be looked at as plasmonic transmission lines. In this paper, different topologies of MIM lines are analyzed with the aim of integrating them with nano-antennas. The effect of geometrical parameters on the transmission...
A rectenna formed from nano-dipole antenna terminated by plasmonic metal-insulator-metal travelling wave transmission line rectifier is introduced. The proposed rectenna is suitable for thermal energy harvesting at 30 THz. The vertical spacing between the two metal layers is kept at 2 nm in order to maximize the rectifier's responsivity. Such small spacing can be realized using Atomic Layer Deposition...
A new strain-balanced multiple quantum well (MQW) approach to tune the Ga0.51In0.49P bandgap is demonstrated. This approach is based on Ga1−xInxP/Ga1−yInyP (x > y) or Ga1−xInxAszP1−z/Ga1−yInyP (x > y) structures, strain balanced and lattice matched to GaAs in a p-i-n solar cell structure. A red shift in the absorption edge and an increase in the short circuit current were observed. Carriers...
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