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This paper presents a study of different digital circuits using two new technologies called GrapheneNanoribbon interconnects (GNRs) and FinFETs at 16 nm scale. A comparative study of the rise time and fall time is obtained at the output of the digital circuits designed using simple interconnects, using graphenenanoribbon interconnects (GNRs), and using FinFETs and GNR interconnects.
VLSI domain is now a days facing new problems while going towards the miniaturization. For solving these problems many new technologies are coming up at device level as well as interconnect level. For getting best outcome in terms of delay, power dissipation and crosstalk variations from the available technology, the compatibility of technologies with each other should be checked. This paper simulates...
Challenges from interconnects in the deep submicron VLSI domain are now a days addressed through the new inventions. These inventions include device as well as interconnect technology domain. Materials based on Graphene such as Carbon Nanotubes and Graphene Nanoribbons are the two capable candidates to replace the traditional Cu in deep-nanometer VLSI interconnect. Multilayer graphene nanoribbon is...
Challenges from interconnects in the deep sub-micron VLSI domain are now a days addressed through the new innovations. These are the materials based on graphene. Carbon Nanotubes and Graphene Nanoribbons are the two capable candidates to replace the traditional Cu in VLSI interconnect. In this paper we have reviewed the studies done till date on GNRs and their performance as interconnect in terms...
A 128-bin, 256 ns deep switched capacitor analog waveform sampling memory ASIC "Anusmriti" is designed using 500 MHz delay lock loop (DLL) in 0.7 um mixed CMOS process for sampling and storing the randomly occurring fast exponential signals. The stored memory samples can be read and digitized subsequently at lower rate thereby relieving the need of high speed digitization. The Anusmriti...
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