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This paper investigated the effect of dielectric thickness to the electrical properties metal-insulator-semiconductor (MIS) device. The MIS device were fabricated having PMMA:TiO2 and ZnO as dielectric and semiconductor layer, respectively. The PMMA:TiO2 nancomposite dielectric film were deposited at different deposition speed from 1000, 2000, 3000, 4000, 5000, 6000 rpm. Results showed that there...
In this paper we study the hysteresis in metal-insulator-semiconductor (MIS) devices fabricated with nanocomposite poly (methyl methacrylate): titanium dioxide (PMMA:TiO2) on n-tyse Si as dielectric and semiconductor layers, respectively. The capacitance-voltage (C-V) and current-voltage (I-V) characteristic of MIS were studied as a function of different frequency varied at 10 kHz until 10 MHz. C-V...
This research is to investigate the dielectric properties of PMMA: TiO2 nanocomposite thin films. The experiments are conducted by varying the TiO2 concentration from 0wt%, 1wt%, 2wt%, 3wt%. The results indicate that dielectric properties of PMMA: TiO2 nanocomposite thin film is affected by the amount of TiO2 concentration added into PMMA solution. The thin film with 3wt% indicate the higher dielectric...
Poly (methy-methacrylate) (PMMA) thin films were deposited by sol-gel spin coating method on glass substrates. PMMA powder was dissolved in 60ml Toluene with the concentration of the PMMA in the solution was varied from 30 ∼ 120 mg. Besides the PMMA concentration, we also studied the effect of the thin films thickness on the electrical properties. The results for electrical properties showed that...
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