The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This research work investigates the ferroelectric characteristic of nanostructured ZnO/MgO bilayer based MFIM capacitor. The low leakage current (10−8 A.cm−2) of nanostructured ZnO/MgO bilayer films were observed for all annealed bilayer films. Nanostructured ZnO/MgO bilayer film annealed at 475°C was then utilized as insulator (dielectric) layer in the fabrication of MFIM capacitor due to its high...
The electrical, dielectric and structural properties of multilayer ZnO/MgO films prepared by simple chemical deposition technique were investigated using I-V measurement, impedance spectroscopy analyzer and field emission scanning electron microscope (FESEM). From the observation, it shows that the annealing temperature influence the electrical, dielectric and structural properties of ZnO/MgO multilayer...
The morphology of PVDF-TrFE (70/30) thin film at various annealing temperature were investigated using non-contact mode Atomic Force Microscopy (AFM). Differential Scanning Calorimetry (DSC) technique was used to obtain TC, Tm, and TCrys of PVDF-TrFE. The prepared spin coated PVDF-TrFE (70/30) thin films were annealed at TC (113°C), Tm (154°C), TCrys (135°C) and Tc at cooling (55°C) in accordance...
Physical properties such as high melting point, low heat capacity and high bonding strength of magnesium oxide, MgO could be get give an advantage to MgO to be used as the dielectric layer. Besides that, MgO also has large band gap (7.8 eV) and high dielectric constant (9.8) could be potentially used as a buffer layer for ferroelectric material. In this work, MgO with 0.2M concentration were prepared...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.