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Zinc oxide (ZnO) nanostructures had successfully prepared using sol-gel immersion method. The tin (Sn) dopant concentration was varied between 0.4 to 2.0 at.%. The surface topography and electrical properties of the ZnO nanostructures were studied using atomic force microscopy (AFM) and current-voltage (IV) measurement. The highest conductivity of 1.68 × 10−2 Scm−1 was obtained by 2.0 at.% sample...
Tin doped ZnO (Sn:ZnO) thin films were deposited onto glass substrate using sol-gel spin coating method. The doping concentrations of thin films were varied from 1.0 – 5.0 at. % Tin. The optical and electrical properties of Sn doped ZnO thin films were investigated. The electrical properties were analyzed using I–V measurement (CEP 2400). The optical properties were characterized by ultraviolet visible...
An organic semiconductor have been discovered and commercialized for many application particularly in organic light-emitting diodes (OLEDs). In OLEDs application, the organic materials play the role of emitting light once the current is passed through. The electrical properties and surface morphology study are investigated for poly [2-methoxy-5(2'-ethylhexyloxy)-phenylene vinylene) (MEH-PPV) with...
In this work, the aligned ZnO Nanorod were grown on ITO-coated glass substrates with Sn-doped ZnO films as a seed layer at different zinc acetate solution molarities of 0.05M, 0.04M, 0.03M and 0.02M by Sol gel immersion ultrasonic assisted. The aligned ZnO nanorods grown at different solution molarities had different of diameter and interspaces between nanorod. The ZnO nanorod grown at 0.03M Zinc...
Tin-doped Zinc Oxide (Sn-doped ZnO) thin film has been deposited onto glass substrates using sol-gel immersion method. These thin films are grown at different doping concentrations. The electrical and structural characterizations of the undoped and doped films were carried out using current-voltage (IV) measurement and field emission scanning electron microscopy (FESEM). From this study, it is known...
In this work, the ZnO thin films were prepared by Sol gel Spin coating technique on glass and ITO substrates with undoped and doped 2 at% of Tin in ZnO film. The thin films particle size of 2 at% of Tin-Doped ZnO was smaller than undoped ZnO as shown in FESEM images. Furthermore, the electrical properties and optical properties of 2 at.% were higher than undoped ZnO films. The effect of Tin doped...
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