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Bottom-gate thin-film transistors (TFTs) with ITO-stabilized ZnO channel layers were successfully fabricated by co-sputtering of ZnO target and ITO target. A comparative study is made on the ITO-stabilized ZnO TFT with different ITO deposition power and different annealing time at 300 °C. It was found that ITO-stabilized ZnO TFT with ITO deposition power of 70W and annealing time of 60min exhibited...
In this paper, the properties of hybrid-phase microstructural indium tin oxide-stabilized ZnO thin films and the relevant high-performance thin-film transistors (TFTs) were systematically investigated. The optically extracted Urbach energy revealed that such thin films owned less band-tail state trapping in comparison with that of the corresponding amorphous thin films. This was determined by better...
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