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The electronic structures and optical properties of the nitrogen doped silicon carbide nanotube (SiCNT) are studied with first principle calculation. A depression is formed near the doped nitrogen atom and the band gap of the SiCNT is narrowed by the doping. The optical properties of the SiCNT are also changed obviously.
Nanotube heterojunction has a good application prospect in nanoelectronic devices. The transport properties of the heterojunction are the foundation of its simulation and design. In this paper, the transport properties of an (8, 0) carbon/silicon carbide nanotube heterojunction were investigated and negative differential resistance (NDR) property was discovered. The origin of the NDR is the fluctuation...
I-V characteristic of the HfO2/SiO2 stack gate MIS capacitor is investigated. The gate leakage current in HfO2/SiO2 stack gate MIS capacitor decreases after constant voltage stress, which is caused by electron trapping. By analyzing the experiment and calculation results, the main transport mechanisms of the gate leakage current in HfO2/SiO2 stack gate is presented. The different transport mechanisms...
Compared with the conventional high electron mobility transistor (HEMT), the metal-insulator-semiconductor (MIS)-HEMT has several advantages such as lower gate leakage current, higher maximum saturation drain current and the better restrain of current collapse. This paper studied the effects of temperature and the thickness of dielectric on the characteristics of Al2O3 MIS-HEMT. The device characteristics...
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